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| TN2435 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V * ** Die in wafer form. RDS(ON) (max) 6.0 ID(ON) (min) 1.0A Order Number / Package TO-243AA* TN2435N8 Die** TN2435NW Product marking for TO-243AA: TN4D where = 2-week alpha date code Same as SOT-89. Product supplied on 2000 piece carrier tape reels. Features High input impedance Low input capacitance Fast switching speeds Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces Solid state relays Power Management Analog switches Ringers Telecom switches Package Option D G D S Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C TO-243AA (SOT-89) Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2435 Thermal Characteristics Package TO-243AA ID (continuous)* 365mA ID (pulsed) 1.8A Power Dissipation @ TA = 25C 1.6W jc ja IDR* 365mA IDRM 1.8A C/W 15 C/W 78 * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 350 0.8 Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = 250A VGS = VDS, ID= 1.0mA VGS = VDS, ID= 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 150mA VGS = 4.5V, ID = 250mA VGS = 10V, ID = 750mA VGS = 10V, ID = 750mA VDS = 25V, ID = 350mA VGS = 0V, VDS = 25V f = 1.0MHz VDD = 25V, ID = 750mA RGEN = 25 VGS = 0V, ISD = 750mA VGS = 0V, ISD = 750mA -5.5 100 10 1.0 0.5 1.0 15.0 10.0 6.0 1.7 125 125 25 8 5 10 28 10 300 200 70 25 20 20 40 30 1.5 ID(ON) RDS(ON) ON-State Drain Current Static Drain-to Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time A %/C m pF ns V ns Notes: 1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr VDD RL OUTPUT D.U.T. TN2435 Typical Performance Curves Output Characteristics 3.0 2.0 VGS = 10V 8V 6V 5V 4V 1.2 Saturation Characteristics 2.5 ID (Amperes) 2.0 5V 1.5 4V 1.0 3V 0.5 2.5V ID (Amperes) VGS = 10V 8V 6V 1.6 0.8 3V 2.5V 0.4 0 0 10 20 30 40 50 0.0 0 2 4 6 8 10 VDS (Volts) Transconductance vs. Drain Current 1.0 V DS =15V TO-243AA 0.8 T A =-55C 2.0 VDS (Volts) Power Dissipation vs. Case Temperature GFS (siemens) 1.5 0.6 T A =25C 0.4 T A =125C PD (Watts) 1.0 1.5 2.0 1.0 0.5 0.2 0.0 0.0 0.0 0.5 0 25 50 75 100 125 150 ID (Amperes) Maximum Rated Safe Operating Area 10 TO-243AA (pulsed) 1.0 1.0 TC (C) Thermal Response Characteristics Thermal Resistance (normalized) TO-243AA P D = 1.6W T C = 25C 0.8 ID (amperes) TO-243AA (DC) 0.6 0.1 0.4 0.01 0.2 T A =25C 0.001 1 10 100 1000 0 0.001 0.01 0.1 1.0 10 VDS (Volts) tp (seconds) 3 TN2435 Typical Performance Curves BVDSS Variation with Temperature 1.2 BV @ 250A 20 On Resistance vs. Drain Current BVDSS (Normalized) 16 RDS(ON) (ohms) 1.1 VGS = 3V VGS = 4.5V 12 1.0 8 0.9 4 VGS = 10V 0.8 -50 0 50 100 150 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TJ (C) Transfer Characteristics 2.0 TA = 25C 1.4 ID (Amperes) VGS(TH) and RDS(ON) w/ Temperature 2.4 VGS(th) (normalized) 1.6 TA = -55C 1.2 VGS(th) @ 1mA 1.0 2.0 1.2 TA = 150C 1.6 0.8 0.8 1.2 0.4 VDS = 25V 0.0 0 2 4 6 8 10 0.6 RDS(ON) @ 10V, 0.75A 0.8 0.4 -50 0 50 100 0.4 150 VGS (Volts) Capacitance vs. Drain Source Voltage 300 f = 1MHz TJ (C) Gate Drive Dynamic Characteristics 10 ID = 365mA 8 225 C (picofarads) VDS=10V VGS (volts) 6 VDS=40V 150 CISS 4 525pF 75 COSS 0 0 CRSS 10 20 30 40 50 2 150pF 0 0.0 1.0 2.0 3.0 4.0 5.0 11/12/01 VDS (Volts) QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 RDS(ON) (normalized) ID (Amperes) |
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